The main body of PASCAL's PLD MBE system is a UHV laser molecular beam epitaxy device. Excimer laser is used for substrate heating; pulse laser is used as the radiation source. Using two combined masks and a scanning reflective high energy electron diffraction (RHEED) device, the system can prepare many samples simultaneously (250 / 10mm2). Each sample is controlled at the atomic level, and different growth conditions can be set. In UHV, a combined mask and target of laser irradiation are used.
The concept of this combined film deposition is a systematic change in deposition conditions due to the use of separate substrates, small area masks and different growth parameters for each sample. The most significant contribution is the rapid screening of growth conditions.
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